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RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier
Preliminary
March 2005
RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier
Features
Full 4.9 to 5.9GHz operation 34dB small signal gain 3% EVM at 18dBm modulated power out 3.3V single positive supply operation Integrated power detector with 20dB dynamic range Lead-free RoHS compliant 3 x 3 x 0.9 mm leadless package Internally matched to 50 Ohms and DC blocked RF input/ output Optimized for use in 802.11a applications
General Description
The RMPA5252 power amplifier is designed for high performance WLAN applications in the 4.9-5.9 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. An on-chip detector provides power sensing capability. The PA's low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology.
Device
Electrical Characteristics1 802.11a OFDM Modulation
(with 176 s burst time, 100 s idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter
Frequency Collector Supply Voltage Mirror Supply Voltage Mirror Supply Current Gain Total Current @ 18dBm POUT EVM @ 18dBm POUT2 Detector Output @ 18dBm POUT Detector Threshold3
Notes: 1. VCC = 3.3V, VM12, VM34 = 2.4V, TA = 25C, PA is constantly biased, 503/4 system. 2. Percentage includes system noise floor of EVM = 0.8%. 3. POUT measured at PIN corresponding to power detection threshold.
Min
4.9 3.0
Typ
3.3 2.4 28 34 275 3.0 500 5
Max
5.9 3.6
Units
GHz V V mA dB mA % mV dBm
(c)2005 Fairchild Semiconductor Corporation
1
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RMPA5252 Rev. C
RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier
Electrical Characteristics1 Single Tone
Parameter
Frequency Supply Voltage (VCC) Mirror Supply Voltage (VM) Gain Total Quiescent Current Bias Current at pin VM (total) 2 P1dB Compression Current @ P1dB Compression Shutdown Current (VM12, VM34 = 0V) Input Return Loss Output Return Loss Detector Output at P1dB Compression Detector Pout Threshold Turn-On Time3
Notes: 1. VCC = 3.3V, VM12, VM34 = 2.4V, TA = 25C, PA is constantly biased, 503/4 system. 2. Power Control bias current is included in the total quiescent current. 3. Measured from Device On signal turn on, to the point where RF POUT stabilizes to 0.5dB. 4. POUT measured at PIN corresponding to power detection threshold.
Min
4.9 3.0 2.1
Typ
3.3 2.4 34 180 28 26 500 <1.0 10 12 1.1 5 <1.0
Max
5.9 3.6 2.6
Units
GHz V V dB mA mA dBm mA A dB dB V V S
4
Absolute Ratings1
Symbol
VCC ICC PC PIN TCASE TSTG
Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Parameter
Positive Supply Voltage Supply Current Positive Bias Voltage RF Input Power Case Operating Temperature Storage Temperature
Ratings
5 1000 4 +5 -40 to +85 -55 to +150
Units
V mA V dBm C C
Functional Block Diagram
VC3 VC4 13 12 GND
Input Match Output Match Voltage Detector Bias Control
N/C
16 GND 1 RF IN 2 GND 3 VC1 4 5 VC2
15
14
N/C
11 RF OUT 10 GND 9 DT1
6 N/C
7 VM12
2
8 VM34
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RMPA5252 Rev. C
RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier
Performance Data
802.11a OFDM Modulation (176 s burst time, 100 s idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Total Measured EVM Vs. Modulated Power Out VCC=3.3V VM12, VM34=2.4V T=25C
8
36
Gain Vs. Modulated Power Out VCC=3.3V VM12, VM34=2.4V T=25C
7
35
6 Total Measured EVM (%) 4.9 GHz 5.1 GHz 5.3 GHz 5.5 GHz 5.7 GHz 5.9 GHz
34
5
Gain (dB)
4
33
3
32
2
31
4.9 GHz 5.1 GHz 5.3 GHz 5.5 GHz 5.7 GHz 5.9 GHz
1
Note: Uncorrected EVM. Source EVM is approximately 0.8%.
0 5 10 15 Modulated Power Out (dBm) 20 25
30 5 10 15 20 25 30
Modulated Power Out (dBm)
Total Current Vs. Modulated Power Out VCC=3.3V VM12, VM34=2.4V T=25C
500
900
Detector Voltage Vs. Modulated Power Out VCC=3.3V VM12, VM34=2.4V T=25C
450
800
350
4.9 GHz 5.1 GHz 5.3 GHz 5.5 GHz 5.7 GHz 5.9 GHz
Detector Voltage (mV)
400 Total Current (mA)
700
600
4.9 5.1 5.3 5.5 5.7 5.9
GHz GHz GHz GHz GHz GHz
300
500
250
400
200 5 10 15 20 25 30
300 5 10 15 20 25 30
Modulated Power Out (dBm)
Modulated Power Out (dBm)
Single Tone
36
Gain Vs. Single Tone Power Out VCC=3.3V VM12, VM34=2.4V T=25C
40
RMPA5252 S-Parameters Vs. Frequency VCC=3.3V VM12,VM34=2.4V T=25C
10 S21 (dB) 35 5
34
30
0
32 4.9 GHz 5.1 GHz 5.3 GHz 5.5 GHz 5.7 GHz 5.9 GHz
25 S21 (dB)
-5
S11, S22 (dB)
Gain (dB)
20
-10
30
15
-15
10
28
-20 S11 (dB)
5
S22 (dB)
-25
26 5 10 15 20 25 30
0 4.5 5 5.5 Frequency (GHz) 6 6.5
Single Tone Power Out (dBm)
-30
3 RMPA5252 Rev. C
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RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier
Schematic
Pin
1 2 3 4 5 6
16 15 14 13
Description
GND RF IN GND VC1 VC2 N/C VM12 VM34 DT1 GND RF OUT GND VC4 N/C VC3 N/C CENTER GND
7
1 2 3 4 12 11 10 9
8 9 10 11 12
5
6
7
8
13 14 15 16 17
Package Outline
Dimensions in mm
4 RMPA5252 Rev. C
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RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier
Evaluation Board Bill of Materials
Qty
1 2 10 Ref 4 4 1 2 2 A/R A/R
Item No.
1 2 3 4 5 (C1, C2, C3, C4) 6 (C5, C6, C7, C8) 7 (C9) 8 (L1, L3) 9 (L2, L4) 10 11
Part Number
F100064 #142-0701-841 #S1322-XX-ND 250R07C150JV4 GRM36X7R103K25 GRM21BR60J106KE01L LL1005-FHL1N2S LL1005-FHL2N2S SN63 SN96
Description
PC Board SMA Connector RT Angle Sgl M Header Assembly, RMPA5252 15pF Capacitor 10,000pF Capacitor 10F Capacitor 1.2nH Inductor 2.2nH Inductor Solder Paste Solder Paste
Vendor
Fairchild Johnson Digikey Fairchild Johanson Murata Murata Toko Toko Indium Corp. Indium Corp.
Evaluation Board Layout
Actual Board Size = 2.0" X 1.5"
5 RMPA5252 Rev. C
Z XYTT 5252
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RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier
Evaluation Board Turn-On Sequence1
Recommended turn-on sequence:
1) Connect common ground terminal to the Ground (GND) pin on the board. 2) Connect voltmeter to DT1 pin (Detector Voltage). 3) Connect VC1, VC2, VC3, VC4 (Collector voltages) together using jumper cables. Apply a single positive supply voltage (3.3V) to pin VC4. 4) Connect VM12 and VM34 (Power Control voltage) together using a jumper cable. Apply a single positive supply voltage (2.4V) to pin VM12. 5) At this point, you should expect to observe the following positive currents flowing into the pins:: 6) Apply input RF power to SMA connector pin RFIN. Current for pin VCC will vary depending on the input drive level. 7) Vary positive voltage VM12, VM34 from +2.4 V to +0 V to shut down the amplifier or alter the power level. Shut down current flow into the pins:
Pin
VCC (total)
Current
<1 nA
Recommended turn-off sequence:
Use reverse order described in the turn-on sequence above.
Note: 1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design
Pin
VCC (total) VM12 and VM34
Current
180 mA 28 mA
6 RMPA5252 Rev. C
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RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I15
7 RMPA5252 Rev. C
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